Semiconductor device

Abstract

A semiconductor device includes a chip that has a first principal surface and a second principal surface on an opposite side thereto, a first impurity region of a first conductivity type that is formed in a surface layer portion of the first principal surface, a second impurity region of a second conductivity type that is formed in a surface layer portion of the first impurity region, a third impurity region of the first conductivity type that is formed in a surface layer portion of the second impurity region, a plurality of trenches that reach the first impurity region through the third impurity region and the second impurity region from the first principal surface, and an electric field relaxation structure of the second conductivity type that is formed integrally with the second impurity region and straddles bottom walls of the plurality of trenches.

Dependencies are inferred from the claim text.