Semiconductor devices including stressor layers and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsWonkeun Chung, Byounghoon Kim, Sangshin Jang, Kang-ill Seo
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Abstract
A semiconductor device includes a substrate, a source/drain region on the substrate, a channel structure on the substrate and electrically connected to the source/drain region, a gate structure on the substrate and at least partially surrounding the channel structure, and a stressor layer in contact with an upper surface of the source/drain region and configured to apply compressive stress or tensile stress to the source/drain region.
Claims22
A semiconductor device, comprising:
- a substrate;
- a source/drain region on the substrate;
- a channel structure on the substrate and electrically connected to the source/drain region;
- a gate structure on the substrate and at least partially surrounding the channel structure;
- and
- a stressor layer in contact with an upper surface of the source/drain region and configured to apply compressive stress or tensile stress to the source/drain region.
(canceled)
A semiconductor device, comprising:
- a substrate;
- a first source/drain region and a second source/drain region spaced apart from each other on the substrate;
- a channel structure between the first source/drain region and the second source/drain region, the channel structure comprising a plurality of channel regions that are spaced apart from each other in a direction perpendicular to an upper surface of the substrate;
- a gate structure on the substrate and at least partially surrounding the channel structure;
- a backside contact structure extending in the substrate and electrically connected to the first source/drain region or the second source/drain region;
- and
- a stressor layer extending into an upper surface of the first source/drain region and configured to apply compressive stress or tensile stress to the first source/drain region.
A method of forming a semiconductor device, comprising:
- forming a stressor layer on an upper surface of a source/drain region and in contact with the source/drain region,
- wherein the stressor layer applies compressive stress or tensile stress to the source/drain region.
(canceled)
Dependencies are inferred from the claim text.