Ldmos transistor, semiconductor structure and manufacturing method thereof

Abstract

A LDMOS transistor, a semiconductor structure and a manufacturing method thereof are provided. The LDMOS transistor includes a channel well, a lightly doped drift region, a source, a drain, a gate oxide layer, a gate, two STI structures, a RPO layer and a contact field plate. The gate oxide layer is disposed on the channel well and the lightly doped drift region. The gate is disposed on the gate oxide layer. The two STI structures are disposed at two sides of the lightly doped drift region. Each of the STI structures includes an insulator and a conductor. The RPO layer is only disposed on the lightly doped drift region. The contact field plate is disposed on the RPO layer. The conductors in the STI structures and the contact field plate are connected to the source.

Dependencies are inferred from the claim text.