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US 2026/0101532 A1Published application
Nitride-based semiconductor device
AssigneeSanken Electric Co., Ltd.
InventorKen Sato
Life of this patent
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Abstract
A nitride-based semiconductor device includes a third nitride-based semiconductor layer having a two-dimensional hole gas layer. As viewed from a control electrode side, the third nitride-based semiconductor layer on a first main electrode side includes a recess, or includes multiple third nitride-based semiconductor layers intermittently provided on a second nitride-based semiconductor layer and each of the multiple third nitride-based semiconductor layers is electrically connected to the control electrode.
Claims10
A nitride-based semiconductor device comprising:
- a first nitride-based semiconductor layer having a two-dimensional electron gas layer at an upper part;
- a second nitride-based semiconductor layer provided on the first nitride-based semiconductor layer and having a band gap energy larger than a band gap energy of the first nitride-based semiconductor layer;
- a third nitride-based semiconductor layer provided on the second nitride-based semiconductor layer, composed of a nitride-based semiconductor material having a band gap energy smaller than the band gap energy of the second nitride-based semiconductor layer, and having a two-dimensional hole gas layer formed in the vicinity of an interface with the second nitride-based semiconductor layer;
- a P-type semiconductor layer on the third nitride-based semiconductor layer;
- a first main electrode on a high potential side electrically connected to the two-dimensional electron gas layer;
- a second main electrode on a low potential side electrically connected to the two-dimensional electron gas layer;
- and
- a control electrode located between the first main electrode and the second main electrode and electrically connected to the P-type semiconductor layer, wherein
- as viewed from the control electrode side, the third nitride-based semiconductor layer on the first main electrode side comprises a recess, or comprises a plurality of third nitride-based semiconductor layers intermittently provided on the second nitride-based semiconductor layer and each of the plurality of third nitride-based semiconductor layers is electrically connected to the control electrode.
6 more elements
A nitride-based semiconductor device comprising:
- a first nitride-based semiconductor layer having a two-dimensional electron gas layer at an upper part;
- a second nitride-based semiconductor layer provided on the first nitride-based semiconductor layer and having a band gap energy larger than a band gap energy of the first nitride-based semiconductor layer;
- a third nitride-based semiconductor layer provided on the second nitride-based semiconductor layer, composed of a nitride-based semiconductor material having a band gap energy smaller than the band gap energy of the second nitride-based semiconductor layer, and having a first two-dimensional hole gas layer formed in the vicinity of an interface with the second nitride-based semiconductor layer;
- a P-type semiconductor layer on the third nitride-based semiconductor layer;
- a first main electrode on a high potential side electrically connected to the two-dimensional electron gas layer;
- a second main electrode on a low potential side electrically connected to the two-dimensional electron gas layer;
- and
- a control electrode located between the first main electrode and the second main electrode and electrically connected to the P-type semiconductor layer, wherein
- in a plan view, in a region formed by extending a length of the third nitride-based semiconductor layer that ranges from an end closest to the first main electrode side to directly below the control electrode, by a length of the control electrode in an extending direction of the control electrode, there is a region where a two-dimensional hole gas is not formed or has a low concentration.
6 more elements
Dependencies are inferred from the claim text.