Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Ting CHANG, Ching Yu CHEN, JIANG-HE XIE
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Abstract
A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a nucleation layer, a strain relief layer, a P-doping GaN layer, a GaN channel layer and an AlGaN barrier layer. The strain relief layer is disposed on the nucleation layer. The strain relief layer has a plurality of modulated P-doping concentrations. The P-doping GaN layer is disposed on the strain relief layer. The GaN channel layer is disposed on the P-doping GaN layer. The AlGaN barrier layer is disposed on the GaN channel layer.
Claims20
A semiconductor structure, comprising:
- a nucleation layer;
- a strain relief layer, disposed on the nucleation layer, wherein the strain relief layer has a plurality of modulated P-doping concentrations;
- a P-doping GaN layer, disposed on the strain relief layer;
- a GaN channel layer, disposed on the P-doping GaN layer;
- and
- an AlGaN barrier layer, disposed on the GaN channel layer.
A semiconductor structure, comprising:
- a nucleation layer;
- a strain relief layer, disposed on the nucleation layer, wherein the strain relief layer has more than one p-p−¿¿, p-i, or p-n junctions;
- a P-doping GaN layer, disposed on the strain relief layer;
- a GaN channel layer, disposed on the P-doping GaN layer;
- and
- an AlGaN barrier layer, disposed on the GaN channel layer.
A manufacturing method of a semiconductor structure, comprising:
- forming a nucleation layer;
- forming a strain relief layer on the nucleation layer, wherein the strain relief layer is doped P-type dopants to have a plurality of modulated P-doping concentrations;
- forming a P-doping GaN layer on the strain relief layer;
- forming a GaN channel layer on the P-doping GaN layer;
- and
- forming an AlGaN barrier layer on the GaN channel layer.
Dependencies are inferred from the claim text.