Inductor in a bonded integrated circuit assembly

A method of forming a semiconductor structure comprising:

• forming a first semiconductor build with two through-silicon vias (TSVs) embedded therein and a first horizontal bar connecting the two TSVs;
• forming a second semiconductor build with four TSVs embedded therein and a second horizontal bar connecting two inner TSVs of the four TSVs;
• and
• bonding the second semiconductor build to the first semiconductor build with the second horizontal bar facing the first semiconductor build, wherein two outer TSVs of the four TSVs of the second semiconductor build are vertically aligned with and bonded to the two TSVs of the first semiconductor build through two pairs of bonding pads.

An inductor comprising:

• multiple semiconductor builds bonded together with one on top of another, each of the multiple semiconductor builds having two or more through-silicon vias (TSVs) that are vertically aligned with two or more TSVs of an adjacent one of the multiple semiconductor builds;
• and
• multiple horizontal bars embedded in each of the multiple semiconductor builds, the multiple horizontal bars conductively connecting one or two of the two or more TSVs of the multiple semiconductor builds,
• wherein the two or more TSVs of each of the multiple semiconductor builds and the multiple horizontal bars are concatenated together, having a spiral shape in a vertical plane that spans across the multiple semiconductor builds.