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US 2026/0101516 A1Published application
Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYumin KIM, Garam PARK, Hyunjae SONG, Minhyun LEE, Seung Dam HYUN
Life of this patent
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Abstract
A semiconductor device may include a plurality of first electrodes stacked above a substrate in a first direction, a second electrode penetrating the plurality of first electrodes, and a variable resistance device layer surrounding the second electrode. A work function of a material in the plurality of first electrodes may be smaller than a work function of a material in the second electrode.
Claims20
A semiconductor device comprising:
- a plurality of first electrodes stacked above a substrate in a first direction;
- a second electrode penetrating the plurality of first electrodes;
- and
- a variable resistance device layer surrounding the second electrode,
- wherein a work function of a material in the plurality of first electrodes is smaller than a work function of a material in the second electrode.
2 more elements
A method of fabricating a semiconductor device, the method comprising:
- alternately stacking a plurality of insulation films and a plurality of first electrodes in a first direction;
- forming a hole penetrating the plurality of insulation films and the plurality of first electrodes in the first direction;
- forming a variable resistance device layer on an inner side wall of the hole, and
- forming a second electrode in the hole to fill the hole, the second electrode being on the variable resistance device layer.
1 more element
A semiconductor device comprising:
- a plurality of first electrodes stacked above a substrate in a first direction, the plurality of first electrodes comprising silicon doped with an impurity;
- a second electrode penetrating the plurality of first electrodes and extending in the first direction;
- and
- a single-film variable resistance device layer surrounding the second electrode and connected to the plurality of first electrodes,
- wherein a work function of a material in the plurality of first electrodes is smaller than a work function of a material in the second electrode.
2 more elements
Dependencies are inferred from the claim text.