Non-volatile memory device having vertical channels and methods of fabrication thereof

A non-volatile memory (NVM) array, including:

• a plurality of source lines (SLs) buried within a substrate extending in a first direction, wherein adjacent SLs are insulated by shallow trench isolations (STIs);
• NVM transistors formed overlying the plurality of SLs, each NVM transistor comprising a lower source/drain (S/D) junction, a vertical channel surrounded by a memory film stack and a metal gate layer, and an upper S/D junction overlying the vertical channel;
• a plurality of word lines (WLs) coupling to the metal gate layers of at least one NVM transistors and extending in a second direction, wherein the second direction is substantially perpendicular to the first direction;
• and
• a plurality of bit lines (BLs) overlying the upper S/D junctions and the metal gates of the NVM transistors, wherein the BLs are coupled to the upper S/D junctions of at least one NVM transistors and extend in the first direction.

A semiconductor device, comprising:

• a plurality of non-volatile memory (NVM) transistors arranged in rows and columns formed in a substrate, wherein each NVM transistor comprises a lower source/drain (S/D) junction, a vertical channel surrounded by a memory film stack and a metal gate layer, and an upper S/D junction overlying the vertical channel;
• a plurality of word lines (WLs), each coupling NVM transistors of a same row, wherein metal gate layers of the NVM transistors of the row form a portion of the WLs;
• a plurality of source lines (SLs), each coupling NVM transistors of two adjacent columns, wherein lower S/D junction of the NVM transistors of the two adjacent columns form a portion of the SLs;
• and
• a plurality of bit lines (BLs), each coupling NVM transistors of at least one column via a plurality of BL connects;
• wherein the plurality of NVM transistors are formed overlying the plurality of SLs formed at least partly within the substrate, the plurality of SLs and BLs propagate in a same direction, and the plurality of WLs and BLs propagate in a perpendicular direction.