3d nand comingled wordline contact and through array via area

Abstract

Systems, apparatuses, and methods may provide for technology that arranges a wordline access structure for memory devices. The memory device includes a memory array and a memory block coupled to the memory array. The memory block includes a plurality of wordlines penetrating through a plurality of decks of a non-volatile memory structure. A plurality of through array vias penetrate through the plurality of decks, where the plurality of through array vias and the plurality of wordlines are comingled in a shared wordline access structure area. Additionally, or alternatively, the memory device is manufactured based on forming multi-level via holes penetrating through a plurality of decks of a non-volatile memory structure of a memory device based on wordline contact patterning. A metal film is deposited to fill the via holes to form wordline contacts.

Dependencies are inferred from the claim text.