Flash memory device and method for forming the same

Abstract

A flash memory device and a method for forming the same are provided. The method includes providing a substrate. The method further includes forming a tunneling dielectric layer on the substrate and stacked structures on the tunneling dielectric layer. Each of the stacked structures includes a floating gate and a mask pattern. The method further includes performing a first etching process to form first trenches in the substrate and performing a second etching process to remove a portion of the substrate exposed from the first trenches to form second trenches. The method further includes entirely forming a dielectric material filling the second trenches and covering the stacked structures. The method further includes removing the mask pattern and the dielectric material on a first top surface and a first side surface of each of the floating gates. The remaining dielectric material forms isolation features in the second trenches.

Dependencies are inferred from the claim text.