Silicon-carbon anode material based on organosilicon-derived waste silicon powder, and preparation method therefor and use thereof

A method for preparing a silicon-carbon anode material based on organosilicon-derived waste silicon powder, comprising the following steps:

• (1) performing rapid annealing treatment on the organosilicon-derived waste silicon powder to obtain rapidly annealed waste silicon powder, and mixing the rapidly annealed waste silicon powder with an acid solution for acid leaching to obtain modified waste silicon powder;
• (2) performing mechanical grinding on the modified waste silicon powder in the step (1) to obtain a modified waste silicon powder abrasive, mixing the modified waste silicon powder abrasive with an organic carbon source and a solvent to obtain a precursor solution, and performing spray granulation on the precursor solution to obtain silicon-carbon microspheres;
• and
• (3) introducing a carbon-deposition precursor source, and performing carbon deposition on the silicon-carbon microspheres in the step (2) to obtain the silicon-carbon anode material;
• wherein
• in the step (1), the organosilicon-derived waste silicon powder contains elemental silicon, copper component, and organosilicon residue;
• and a content of the elemental silicon is 60-95 wt %, a content of the copper component is 0.1-15 wt %, and a content of the organosilicon residue is 0.1-20 wt %;
• in the step (1), a temperature for the rapid annealing treatment is 200-1500° C., a holding time for the rapid annealing treatment is 0.1 h-20 h, and the rapid annealing treatment is performed 1-5 times;
• in the step (1), the acid solution comprises an oxidizing agent, the oxidizing agent is H2O2, Fe(NO3)3, KMnO4, KBrO3, K2Cr2O7, or Na2S2O8, and a concentration of the oxidizing agent in the acid solution is 0-10 mol/L;
• and
• in the step (3), the carbon-deposition precursor source is a mixture of an active gas, hydrogen, and argon;
• the active gas is methane, acetylene, or carbon monoxide;
• and a volume fraction of the active gas in the carbon-deposition precursor source is 10-60%, a volume fraction of the hydrogen in the carbon-deposition precursor source is 10-50%, and a volume fraction of the argon in the carbon-deposition precursor source is 10-50%.