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US 2026/0100337 A1Published application
Plasma etching method
AssigneeAjouuniversity Industry-Academic Cooperation Foundation
InventorsChang-Koo KIM, Sang Hyun YOU
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Abstract
Disclosed is a plasma etching method. The method may include a first step of vaporizing liquid heptafluoroisopropyl methyl ether (HFE-347mmy) and liquid pentafluoropropanol (PFP); a second step of supplying a discharge gas containing the vaporized HFE-347mmy, the vaporized PFP, and argon gas to a plasma chamber in which an etching target is disposed; and a third step of discharging the discharge gas to generate plasma and of plasma-etching the etching target using the generated plasma.
Claims6
A plasma etching method comprising:
- a first step of vaporizing liquid heptafluoroisopropyl methyl ether (HFE-347mmy) and liquid pentafluoropropanol (PFP);
- a second step of supplying a discharge gas containing the vaporized HFE-347mmy, the vaporized PFP, and argon gas to a plasma chamber in which an etching target is disposed;
- and
- a third step of discharging the discharge gas to generate plasma and of plasma-etching the etching target using the generated plasma.
1 more element
Dependencies are inferred from the claim text.