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US 2026/0100336 A1Published application
Apparatus and method of treating substrate
AssigneeSemes Co., Ltd.
InventorsSeungjun OH, Jinwoo NAM, Janghee LEE, Young Hak PARK, Jin Woo CHOI, Ahn Na SEO
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Abstract
The present invention provides a method of treating a substrate. The method may include: a first treatment operation in which hydrogen radicals are transferred to a substrate adjusted to have a first temperature to treat the substrate; and a second treatment operation in which the hydrogen radicals are transferred to the substrate adjusted to have a second temperature that is different from the first temperature to treat the substrate.
Claims6
A method of treating a substrate, the method comprising:
- a first treatment operation in which hydrogen radicals are transferred to a substrate of which a temperature is adjusted to a first temperature to treat the substrate;
- and
- a second treatment operation in which the hydrogen radicals are transferred to the substrate of which the temperature is adjusted to a second temperature that is different from the first temperature to treat the substrate,
- wherein a pattern having a pin structure is formed on the substrate and impurities containing germanium (Ge) is attached to the pattern,
- wherein in the first treatment operation, the impurities are removed, and
- wherein the second treatment operation is performed after the first treatment operation, and in the second treatment operation, surface roughness of the substrate that is made of a material containing silicon (Si) is improved.
3 more elements
Dependencies are inferred from the claim text.