Nonvolatile memory device and memory system including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSangyun Kim, Hyunsuk Kang, Kyoungtae Kang, Dongku Kang, Youngdon Choi
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AssigneeSamsung Electronics Co., Ltd.
InventorsSangyun Kim, Hyunsuk Kang, Kyoungtae Kang, Dongku Kang, Youngdon Choi
Estimating the term…
A first group of FIFO registers are connected to page buffer circuits, respectively. The second group of FIFO registers are connected to the first group of FIFO registers. The multiplexer selects one of a plurality of sub data output from the second group of FIFO registers. The control circuit, in response to a first read command, performs a first read operation by sensing a first data stored in a first memory plane and by storing the first sensed data in a corresponding first set of FIFO registers as a first sub data and, in response to a second read command, performs a second read operation by sensing a second data stored in a second memory plane as a second sub data while performing a first output operation to output the first sub data through a multiplexer and a data input/output circuit in response to a first data output command.
A nonvolatile memory device comprising:
A memory system comprising:
A nonvolatile memory device comprising:
Dependencies are inferred from the claim text.