Sgs voltage in unselected blocks during program

A method for programming NAND memory, the method comprising:

• applying a first voltage to source side select lines in a first set of unselected blocks in a plane in the NAND memory, the first set being physically adjacent to a selected block in the plane;
• floating source side select lines in a second set of unselected blocks in the plane in the NAND memory, the second set of unselected blocks being the remaining unselected blocks other than the first set of unselected blocks;
• applying a second voltage to a source line in the plane while applying the first voltage to the source side select lines in the first set of unselected blocks and while floating the source side select lines in the second set of unselected blocks, wherein source side select transistors connected to the source side select lines in the first set of unselected blocks are non-conductive;
• and
• applying a program voltage to a selected word line in the selected block while applying the first voltage to the source side select lines in the first set of unselected blocks, floating the source side select lines in the second set of unselected blocks, and applying the second voltage to the source line.

A non-volatile storage device, comprising:

• a plane comprising a source line and a plurality of blocks, each block comprising NAND strings, word lines associated with the NAND strings in the block, and a source side select line associated with the NAND strings in the block;
• and
• one or more control circuits in communication with the plane, the one or more control circuits configured to:
• apply a first voltage to the source side select lines in a first set of unselected blocks in a plane in the non-volatile storage device, the first set being physically adjacent to a selected block in the plane;
• float source side select lines in a second set of unselected blocks in the plane in the non-volatile storage device;
• raise a voltage on the source line in the plane to a second voltage while floating the source side select lines in the second set of unselected blocks;
• and
• apply a program voltage to a selected word line in the select block while applying the first voltage to the source side select lines in the first set of unselected blocks, floating the source side select lines in the second set of unselected blocks, and applying the second voltage to the source line.