Nonvolatile memory device including plurality of string selection transistors

Abstract

A nonvolatile memory device includes a first cell string to an n-th cell string connected in parallel between a bit line and a common source line. Each of the first to n-th cell strings includes: a corresponding one of a first ground selection transistor to an n-th ground selection transistor respectively connected to a first ground selection line to an n-th ground selection line; and a first string selection transistor to an m-th string selection transistor respectively connected to a first string selection line to an m-th string selection line. Based on the first cell string being a selected cell string: the first to m-th string selection transistors of the first cell string are turned on, and at least one of the first to m-th string selection transistors of each of the second to n-th cell strings is turned off, where m and n are natural numbers, and m is less than or equal to n.

Dependencies are inferred from the claim text.