Magnetic memory and operation method of the same

Abstract

A magnetic memory and an operation method thereof are provided. The magnetic memory includes a heavy metal layer and at least one magnetic tunnel junction (MTJ) formed on the heavy metal layer. The MTJ includes a free layer, a pinned layer, a tunneling barrier layer, a first diffusion barrier layer and a second diffusion barrier layer. The free layer is located on the heavy metal layer. The pinned layer is located on the free layer. The tunneling barrier layer is located between the free layer and the pinned layer. The first diffusion barrier layer is located between the tunneling barrier layer and the free layer. The second diffusion barrier layer is located between the tunneling barrier layer and the pinned layer. The magnetic memory has excellent reliability and significantly increases the number of cycles of memory write and erase functions.

Dependencies are inferred from the claim text.