Correcting Uncorrectable Errors In Memory Devices Using Erasure Code And Metadata

Abstract

The technology is generally directed to error detection and correction in memory devices using dynamic random-access memory (DRAM) elements. Error correction codes (ECC) provide the ability to correct errors in memory elements. The ability to extend ECC capabilities to correct errors in defective elements is achievable when the location of the error(s) is known. Error correction metadata is calculated in the memory device when a write operation is performed. The metadata is stored in available space on the memory device. To locate uncorrectable errors, a pair of elements is selected and ECC is performed to recreate the data in the pair of elements. The metadata is recalculated on the recreated data and compared to the originally stored metadata. A match in metadata indicates the chosen pair contained the error. A mismatch indicates that the recreated data does not contain the error. Locating errors extends ECC correction capability.

Dependencies are inferred from the claim text.