Substrate processing apparatus

A substrate processing apparatus, comprising:

• a process chamber for processing a substrate;
• a carrier gas supply including a carrier gas box configured to store a carrier gas and a carrier gas line connected to the carrier gas box, the carrier gas line is configured to provide flow of the carrier gas;
• a precursor gas supply including a canister configured to generate a precursor gas, and a source gas line configured to provide flow of a mixed gas of the carrier gas and the precursor gas, the source gas line connecting the canister and the process chamber;
• and
• a valve on the source gas line and configured to control flow of the mixed gas to the process chamber.

A substrate processing apparatus, comprising:

• a process chamber for processing a substrate;
• a carrier gas supply including a carrier gas box configured to store a carrier gas and a carrier gas line connected to the carrier gas box, the carrier gas line is configured to provide flow of the carrier gas;
• a precursor gas supply including a canister configured to generate a precursor gas, and a source gas line configured to provide flow of a mixed gas of the carrier gas and the precursor gas, wherein the source gas line connects the canister and the process chamber;
• a first valve configured to selectively open and close the source gas line;
• a second valve configured to selectively open and close the carrier gas line;
• a concentration sensor disposed on the source gas line and configured to measure a concentration of the mixed gas;
• and
• a controller configured to control the first valve or the second valve based on the concentration of the mixed gas measured by the concentration sensor,
• wherein, based on the concentration of the mixed gas being less than a set concentration, the controller is configured to control the second valve to open the carrier gas line.