Metal chloride precursors and deposition of metal-containing films

Abstract

A method for forming a metal-containing film comprises: a) exposing a substrate to a vapor of a metal-containing film-forming composition: b) exposing the substrate to a co-reactant; and c) repeating the steps of a) and b) until a desired thickness of the metal-containing film is deposited on the substrate using a vapor deposition process, wherein the metal-containing film-forming composition comprises a metal chloride precursor having the formula: wherein, M is a transition metal, a rare earth element, an alkali metal, or an alkaline earth metal; R1, R2, R3, R4 and R5 each are independently selected from a hydrogen atom, a C1 to C10 linear or branched alkyl-group, a C3 to C10 cyclic alkyl- group, or F, Si, Ge containing C1 to C10 linear and branched alkyl chain; x and y are integers; provided that x+y equals to the oxidation state of M.

Dependencies are inferred from the claim text.