Method for making alloy thin film

A method for making an alloy thin film comprising a first element to an M-th element, comprising:

• providing a reaction chamber, wherein the reaction chamber is provided with a spraying device and a supporting platform;
• disposing a pre-processed structure on a surface of the supporting platform, wherein the pre-processed structure comprises a substrate layer, a high dielectric gate dielectric layer disposed on a surface of the substrate layer, and a barrier layer disposed on a surface of the high dielectric gate dielectric layer away from the substrate layer;
• forming an alloy thin film with a characteristic atomic ratio of the first element to the M-th element on a surface of the pre-processed structure, comprising:
• setting the spraying device to have a characteristic temperature;
• setting a characteristic distance between the spraying device and the supporting platform;
• setting a flow-stabilizing device to have a characteristic flow rate;
• and
• introducing a first precursor to an M-th precursor into the reaction chamber through the spraying device under conditions of the characteristic temperature, the characteristic distance, and the characteristic flow rate;
• wherein M is an integer greater than or equal to 2;
• and any m-th precursor comprises an m-th element, and m is an integer greater than or equal to 1 and less than or equal to M;
• and
• adjusting the characteristic atomic ratio by adjusting any one or more selected from the group consisting of the characteristic temperature, the characteristic distance, and the characteristic flow rate.