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US 2026/0098332 A1Published application
Systems and methods for processing a silicon surface using multiple radical species
AssigneeASM IP Holding B.V.
InventorsGregory Deye, Caleb Miskin, Hichem M’Saad, Steven Reiter, Alexandros Demos, Fei Wang
Life of this patent
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Abstract
A method of processing a silicon surface includes using a first radical species to remove contamination from the surface and to roughen the surface; and using a second radical species to smooth the roughened surface. Reaction systems for performing such a method, and silicon surfaces prepared using such a method, also are provided.
Claims33
A method of processing a surface of silicon, the method comprising:
- removing contamination from the surface, comprising exposing the surface to a first radical species;
- after exposing the surface to the first radical species, smoothing the surface, comprising exposing the surface to a second radical species;
- and
- epitaxially growing a silicon film on the smoothed surface.
1 more element
A system for processing a surface of silicon, the system comprising:
- a reaction chamber configured to hold a substrate having a surface to be processed;
- a remote plasma unit;
- one or more processors;
- and
- memory storing instructions that, when executed by the one or more processors, cause the system to:
- cause the remote plasma unit to generate a first radical species using a first radical species precursor;
- cause contamination to be removed from the surface, comprising causing the first radical species to flow into the reaction chamber;
- cause the remote plasma unit to generate a second radical species using a second radical species precursor;
- after causing the first radical species to flow into the reaction chamber, cause smoothing of the surface, comprising causing the second radical species to flow into the reaction chamber;
- and
- cause epitaxial growth of a silicon film on the smoothed surface.
8 more elements
Dependencies are inferred from the claim text.