Semiconductor structure with capping member containing oxynitride layer and method of manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJEN-YUAN CHANG
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Abstract
The semiconductor structure includes a die structure including: a substrate, a first dielectric disposed over the substrate, a first interconnect structure disposed within the first dielectric, a second dielectric disposed on the first dielectric, and a conductive pad surrounded by the second dielectric, a capping member surrounding the die structure, and an insulating member surrounding the capping member, wherein the capping member includes a first oxynitride layer in contact with the die structure or the insulating member.
Claims20
A method of manufacturing a semiconductor structure, comprising:
- providing a carrier substrate;
- disposing a die structure including a substrate on the carrier substrate;
- disposing an oxynitride layer covering the die structure;
- disposing a nitride layer over the oxynitride layer;
- and
- disposing an insulating material covering the nitride layer.
A method of manufacturing a semiconductor structure, comprising:
- disposing a die structure over a carrier substrate;
- disposing an oxynitride layer covering the die structure and the carrier substrate;
- disposing a nitride layer over the oxynitride layer;
- disposing an insulating material covering the nitride layer;
- and
- removing portions of the oxynitride layer, the nitride layer and the insulating material to at least partially expose the die structure.
A method of manufacturing a semiconductor structure, comprising:
- disposing a die structure over a carrier substrate;
- disposing a first oxynitride layer covering the die structure and the carrier substrate;
- disposing a nitride layer over the first oxynitride layer;
- disposing a second oxynitride layer over the nitride layer;
- disposing an insulating material covering the second oxynitride layer;
- and
- removing portions of the first oxynitride layer, the nitride layer, the second oxynitride layer and the insulating material to at least partially expose the die structure.
Dependencies are inferred from the claim text.