Power device including metal layer

A method of forming a power semiconductor device, the method comprising:

• forming an insulating layer over a substrate;
• forming a first metal material layer over a first portion of the insulating layer;
• forming a second metal material layer over the first metal material layer;
• etching the second metal material layer to form a second metal pattern;
• and
• etching the first metal material layer to form a first metal pattern, an outer edge of the second metal pattern being disposed farther than an outer edge of the first metal pattern from an edge of the substrate.

A method comprising:

• forming an insulating layer over a substrate;
• forming a metal layer over the insulating layer, the metal layer including a first portion separated from second portion, the first portion having a first thickness and the second portion having a second thickness greater than the first thickness;
• forming a passivation layer over the metal layer and a portion of the insulating layer;
• and
• forming a coating layer over the passivation layer, a portion of the coating layer being disposed between the first portion and the second portion.