Method of manufacturing an electronic device comprising doped silicon electrical contacting elements

A method of manufacturing an electronic device, comprising the following steps:

• a) forming, in an upper surface side of a semiconductor substrate, first doped regions of a first conductivity type and second doped regions of a second conductivity type opposite to the first type;
• b) after step a), depositing a dielectric layer on the upper surface of the substrate;
• c) after step b), forming first and second openings in dielectric layer to respectively expose the first and second regions of the substrate;
• d) implanting non-doping ions in the second regions to amorphize an upper portion of the second regions;
• e) after steps c) and d), filling the first and second openings with doped monocrystalline or polycrystalline silicon of the first conductivity type to form contacting vias on the first and second regions;
• and
• f) performing a thermal anneal to recrystallize said upper portion of the second regions.