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US 2026/0096402 A1Published application
Silicon oxynitride film to protect silicon nitride
OwnerJackson Bauerinventor
Life of this patent
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Abstract
Described examples include an integrated circuit that includes a trench extending into a semiconductor substrate. A silicon nitride body is located within the trench. A polysilicon electrode extends over the silicon nitride body, and a silicon oxynitride layer is located between the silicon nitride body and the polysilicon electrode.
Claims20
An integrated circuit comprising:
- a trench extending into a semiconductor substrate;
- a silicon nitride body within the trench;
- a polysilicon electrode extending over the silicon nitride body;
- and
- a silicon oxynitride layer between the silicon nitride body and the polysilicon electrode.
2 more elements
An electronic device, comprising:
- an epitaxial layer over a semiconductor substrate;
- a transistor in or over the epitaxial layer, including:
- a source and a drain formed in the epitaxial layer;
- a cavity in a surface of the epitaxial layer between the source and the drain;
- a silicon nitride body in the cavity;
- a gate electrode extending from the source toward the drain;
- a gate dielectric between the gate electrode and the semiconductor substrate that extends from the source toward the drain;
- a silicon oxynitride layer between the gate electrode and the silicon nitride body.
5 more elements
A method of forming an integrated circuit, comprising:
- forming a silicon nitride body over a semiconductor substrate;
- and
- heating the silicon nitride body in the presence of oxygen, thereby forming a silicon oxynitride layer on the silicon nitride body and having a thickness of at least 2 nm.
Dependencies are inferred from the claim text.