Mask modification method

A method for shaping a patterned mask on a substrate, the method comprising:

• receiving the substrate on a substrate holder, the substrate comprising the patterned mask disposed over an underlying layer, the patterned mask comprising a feature pattern;
• determining a topological map of the patterned mask using a light detector;
• and
• depositing i layers over the patterned mask to reshape the patterned mask, each of the i layers deposited by a processing tool directed over the substrate at a corresponding ith polar angle (θi) for a corresponding ith timeframe (ti), wherein i is a positive integer between 1-100. determined using the topological map of the patterned mask and a desired shape for the feature pattern.

A system for processing a substrate, the system comprising:

• a substrate holder disposed in a processing chamber;
• a processing tool;
• a light detector;
• and
• a controller coupled to the substrate holder, the processing tool, the light detector, and a memory storing instructions to be executed by the controller, the instructions, when executed, cause the controller to:
• receive the substrate on the substrate holder, the substrate comprising a patterned mask disposed over an underlying layer, the patterned mask comprising a feature pattern;
• determine a topological map of the patterned mask using the light detector;
• and
• deposit i layers over the patterned mask to reshape the patterned mask and form a modified patterned mask comprising a reshaped feature pattern, each of the i layers deposited by the processing tool directed over the substrate at a corresponding ith polar angle (θi) for a corresponding ith timeframe (ti), wherein i is a positive integer between 1-100. determined using the topological map of the patterned mask and a desired shape for the feature pattern.