Vertical iii-v hall sensor

A vertical III-V Hall sensor comprising:

• a substrate layer with an upper side and an underside;
• a first insulating layer formed on the substrate layer;
• a III-V semiconductor layer formed on the first insulating layer;
• and
• a second insulating layer formed on the III-V semiconductor layer, the second insulating layer being structured and having at least three openings designed as contact regions,
• wherein the III-V semiconductor layer has a uniform thickness at least between the contact regions and including the contact regions;
• wherein the III-V semiconductor layer has a length formed in an X direction and a width formed in a Y direction,
• wherein at least three contact regions are arranged along a straight line;
• wherein the III-V semiconductor layer has an n doping;
• and
• wherein the III-V semiconductor layer has a peripheral insulation.