Light-emitting diode chips with metallic dimming layers and related methods

A method for fabrication of a light-emitting diode (LED) chip, the method comprising:

• etching a mesa with mesa sidewalls in an active LED structure, the active LED structure comprising an n-type layer, a p-type layer, and an active layer that is between the n-type layer and the p-type layer;
• depositing a first passivation layer on a top side of the active LED structure and on the mesa sidewalls;
• selectively depositing a metallic layer on portions of the first passivation layer, the metallic layer configured to absorb or reflect light generated by the active LED structure;
• and
• forming an n-contact on the top side of the active LED structure and electrically connected to the n-type layer by etching an opening through the first passivation layer and depositing the n-contact in the opening.

A light-emitting diode (LED) chip, comprising:

• an active LED structure comprising an n-type layer, a p-type layer, and an active layer that is between the n-type layer and the p-type layer, the active LED structure forming a mesa with mesa sidewalls that define a perimeter of the active LED structure;
• an n-contact on a top side of the active LED structure and electrically connected to the n-type layer;
• a current spreading layer on the p-type layer;
• and
• a barrier layer on the current spreading layer, the barrier layer comprising a first sublayer that directly contacts the current spreading layer and a second sublayer on the first sublayer, the first sublayer being discontinuous such that portions of the second sublayer directly contact the current spreading layer through the first sublayer.