Semiconductor epitaxial structure and semiconductor device

Abstract

The present disclosure provides a semiconductor device including a first epitaxial stack and a first contact electrode. The first epitaxial stack includes a first semiconductor, a second semiconductor, and a first active region disposed between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a first capping layer having a first thickness. The second semiconductor structure includes a second capping layer having a second thickness larger than the first thickness. The first active region includes a light-emitting stack, a first confinement structure located between the light-emitting stack and the first capping layer, and a second confinement structure located between the light-emitting stack and the second capping layer. The first confinement structure has a third thickness, and the second confinement has a fourth thickness less than the third thickness. The first contact electrode is electrically connected to the first semiconductor structure.

Dependencies are inferred from the claim text.