Led chip structure and display device

An LED chip structure, comprising a semiconductor stack layer, wherein the semiconductor stack layer comprises:

• an N-type semiconductor layer, comprising a first N-type GaN layer and a second N-type GaN layer, wherein a third N-type GaN layer is disposed between the first N-type GaN layer and the second N-type GaN layer, and N-type peak doping concentration of the third N-type GaN layer is less than peak doping concentration of the first N-type GaN layer and less than peak doping concentration of the second N-type GaN layer;
• an active layer, disposed above the N-type semiconductor layer, wherein the active layer comprises multiple layers formed by repeatedly stacking a well layer and a quantum barrier layer;
• a P-type semiconductor layer, disposed above the active layer.