Semiconductor devices and methods of formation

A semiconductor package, comprising:

• a first semiconductor die, comprising:
• a first interconnect layer;
• one or more first conductive structures in the first interconnect layer;
• and
• a first plurality of bonding structures above the first interconnect layer;
• and
• a trench capacitor structure directly coupled to a first bonding structure of the first plurality of bonding structures;
• and
• a second semiconductor die bonded to the first semiconductor die at a bonding interface such that the first semiconductor die and the second semiconductor die are vertically arranged in the semiconductor package,
• wherein the second semiconductor die comprises:
• a second interconnect layer;
• one or more second conductive structures in the second interconnect layer;
• and
• a second plurality of bonding structures below the second interconnect layer,
• wherein a second bonding structure of the second plurality of bonding structures is electrically coupled to the first bonding structure.

A method, comprising:

• forming one or more integrated circuit devices in a device layer of a semiconductor device;
• forming an interconnect layer of the semiconductor device above the device layer;
• forming a recess through a plurality of dielectric layers of the interconnect layer;
• forming a trench capacitor structure of the semiconductor device in the recess;
• and
• forming a bonding structure of the semiconductor device on the trench capacitor structure.