Cell region having source region location-restrictions and drain region location-restrictions and method of manufacturing same

A device comprising first and second cell regions each of which includes:

• a first active region (AR) extending in a first direction;
• first metal-to-source/drain contact (MD) structures extending in a second direction perpendicular to the first direction and aligning to beta tracks;
• in a first metallization layer, segments therein (M_1st segments) extending in the first direction and aligning to alpha tracks;
• and
• for one or more first or second locations, a corresponding region of the first AR being configurable as a source region or a drain region;
• for one or more third locations, a corresponding region of the first AR being configurable as a source region,
• regions of the first AR at the third locations being free of being configurable as a drain region;
• for one or more fourth location, a corresponding region of the AR being free from being configurable as a source region or a drain region;
• each of the first to fourth locations being at an intersection of (A) a corresponding one of the alpha tracks and (B) a corresponding one of the beta tracks;
• first and last ones of the beta tracks substantially aligning correspondingly to left and right boundaries of the cell region;
• the first and last alpha tracks substantially aligning correspondingly to top and bottom boundaries of the cell region;
• relative to the second direction, the first cell region being stacked on the second cell region;
• for each of the first and second cell regions,
• one or more ones of the M_1st segments aligned to the first alpha track are also overlapping the top boundary, and
• the last alpha track of the first cell region is substantially collinear with the first alpha track of the second cell region such that the one or more ones of the M_1st segments aligned to the first alpha track of the second cell region are shared by the first cell region.

A method of forming a cell region of a device, the method comprising:

• forming a first active region (AR) that extend in a first direction;
• forming first metal-to-source/drain contact (MD) structures that extend in a second direction perpendicular to the first direction and align to beta tracks;
• forming segments (M_1st segments) in a first metallization layer (M_1st layer) that extend in the first direction and align to alpha tracks;
• and
• the forming a first active region (AR) including as follows,
• for one or more first or second locations, doping a corresponding region of the first AR as a source region or a drain region;
• for one or more third locations, doping a corresponding region of the first AR as a source region,
• regions of the first AR at the third locations being free of being configurable as a drain region;
• for one or more fourth locations, avoiding a corresponding region of the AR being doped as a source region or a drain region;
• each of the first to fourth locations being at an intersection of (A) a corresponding one of the alpha tracks and (B) a corresponding one of the beta tracks;
• first and last ones of the beta tracks substantially aligning correspondingly to left and right boundaries of the cell region;
• and
• the first and last alpha tracks substantially aligning correspondingly to top and bottom boundaries of the cell region.