Lateral high voltage semiconductor device and method for manufacturing

A method for manufacturing a semiconductor device, the method comprising:

• providing a semiconductor body having a front side and a back side opposite to the front side, a device region within the semiconductor body at the front side, wherein the device region comprises at least one lateral semiconductor element, and a first doped region of a second conductivity type between the device region and the back side, wherein the first doped region overlaps first portions of the back side;
• forming at least one second doped region within the semiconductor body, wherein the at least one second doped region overlaps second portions of the back side, wherein the first doped region is arranged between the device region and the at least one second doped region;
• and
• forming an insulating layer at least partly covering the back side of the semiconductor body,
• wherein the at least one second doped region differs from the first doped region in at least one of a doping concentration by at least 20% and/or a conductivity type of the doping,
• wherein both the first portions of the back side and the second portions of the back side laterally overlap with the insulating layer.