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US 2026/0096196 A1Published application
Transistor and semiconductor device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorHwayeong LEE
Life of this patent
Estimating the term…
Abstract
A transistor according to at least one example embodiment includes a first transistor located on a base layer and including a first channel region, the first channel region including at least one of crystalline or polycrystalline silicon, and a second transistor located on the first transistor, overlapping at least a portion of the first transistor in a height direction, the second transistor including a second channel region including an oxide semiconductor.
Claims20
A transistor, comprising:
- a first transistor located on a base layer and including a first channel region, the first channel region including at least one of crystalline or polycrystalline silicon;
- and
- a second transistor located on the first transistor, overlapping at least a portion of the first transistor in a height direction, the second transistor including a second channel region, the second channel region including an oxide semiconductor.
A transistor, comprising:
- a first transistor on a base layer, the first transistor including a first channel region and first source drain regions located, respectively, under and over the first channel region in a height direction, the first channel region including at least one of a crystalline or polycrystalline silicon;
- and
- a second transistor on the base layer and located on a side surface of the first transistor, the second transistor including a second channel region and second source drain regions located, respectively, under and over the second channel region in the height direction, the second channel region including an oxide semiconductor.
A semiconductor device, comprising:
- a transistor structure including a first transistor and a second transistor on a base layer, the first transistor including a first channel region, the second transistor including a second channel region, the second transistor located over the first transistor and at least partially overlapping the first transistor in a height direction;
- and
- a memory cell connected to the transistor structure,
- wherein the first channel region includes at least one of crystalline or polycrystalline silicon, and
- the second channel region includes an oxide semiconductor.
2 more elements
Dependencies are inferred from the claim text.