Conformal approaches for fabricating contacts and the resulting structures

An integrated circuit structure, comprising:

• a nanowire coupled to or including a source or drain structure;
• a dielectric layer above the source or drain structure;
• an opening in the dielectric layer and extending into the source or drain structure, the opening having a bottom and sidewalls;
• a conductive liner along the bottom and the sidewalls of the opening, wherein the conductive liner has a thickness variation of less than 10% throughout the conductive liner with respect to the bottom and the sidewalls of the opening, respectively;
• a conductive fill on the conductive liner and in a remainder of the opening, wherein a ratio of an area of the conductive fill to the conductive liner in a cross-sectional perspective is at most 3:1.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a nanowire or fin coupled to or including a source or drain structure;
• a dielectric layer above the source or drain structure;
• an opening in the dielectric layer and extending into the source or drain structure, the opening having a bottom and sidewalls;
• a conductive liner along the bottom and the sidewalls of the opening, wherein the conductive liner has a uniform thickness throughout the conductive liner with respect to the bottom and the sidewalls of the opening, respectively;
• a conductive fill on the conductive liner and in a remainder of the opening, wherein a ratio of an area of the conductive fill to the conductive liner in a cross-sectional perspective is at most 3:1.