Air Gap for Capacitance Reduction in Amplifier Devices

A transistor comprising:

• a drain, a source, and a gate;
• a drain contact in a pre-metal dielectric, said pre-metal dielectric having a first dielectric constant;
• a first gap in said pre-metal dielectric, said first gap over an isolation area and between said gate and said drain contact;
• a first gap dielectric in said first gap, said first gap dielectric having a second dielectric constant less than said first dielectric constant so as to reduce a capacitance between said gate and said drain contact.

A semiconductor structure comprising:

• a first transistor coupled to a second transistor;
• said first transistor comprising:
• a first drain contact and a first source contact in a pre-metal dielectric, said pre-metal dielectric having a first dielectric constant;
• a first gap in said pre-metal dielectric, said first gap over a first active area and offset from a first gate towards said first drain contact;
• a first gap dielectric in said first gap, said first gap dielectric having a second dielectric constant less than said first dielectric constant;
• said second transistor comprising:
• a second gap in said pre-metal dielectric, said second gap between a second drain contact and a second source contact;
• a second gap dielectric in said second gap, said second gap dielectric having a third dielectric constant less than said first dielectric constant.