Power semiconductor device and method of producing a power semiconductor device

A power semiconductor device having a vertical IGBT configuration or a vertical RC IGBT configuration, the power semiconductor device comprising, in an active region:

• a back side emitter region laterally segmented into at least a first emitter region and a second emitter region,
• wherein the first emitter region has a first lateral total area and, with respect to the first lateral total area and a second conductivity type, a medium dopant dose,
• wherein the second emitter region has a second lateral total area and comprises one or more first subregions and one or more second subregions,
• wherein the first lateral total area amounts to less than 50% of the second lateral total area,
• wherein the one or more first subregions forms/form a first portion of the second lateral total area and has/have, with respect to the first portion and the second conductivity type, a high dopant dose,
• wherein the one or more second subregions forms/form a second portion of the second lateral total area and has/have, with respect to the second portion and the second conductivity type, a low dopant dose,
• wherein the high dopant dose amounts to more than 150% of the medium dopant dose,
• wherein the low dopant dose amounts to less than 50% of the medium dopant dose.

A method of producing a power semiconductor device, the method comprising:

• forming a semiconductor body comprising a drift region of a first conductivity type and having a front side and a back side opposite thereof;
• forming a first load terminal at the front side;
• forming a second load terminal at the back side;
• forming, in the semiconductor body, a source region of the first conductivity type and a body region of a second conductivity type between the source region and the drift region, wherein both the source region and the body region are electrically connected to the first load terminal;
• forming, in the semiconductor body, a back side emitter region of the second conductivity type electrically connected to the second load terminal between the drift region and the back side, wherein the back side emitter region is laterally segmented into at least a first emitter region and a second emitter region,
• wherein the first emitter region has a first lateral total area and has, with respect to the first lateral total area and the second conductivity type, a medium dopant dose,
• wherein the second emitter region has a second lateral total area and comprises one or more first subregions and one or more second subregions,
• wherein the first lateral total area amounts to less than 50% of the second lateral total area,
• wherein the one or more first subregions forms/form a first portion of the second lateral total area and has/have, with respect to the first portion and the second conductivity type, a high dopant dose,
• wherein the one or more second subregions forms/form a second portion of the second lateral total area and has/have, with respect to the second portion and the second conductivity type, a low dopant dose,
• wherein the high dopant dose amounts to more than 150% of the medium dopant dose, and
• wherein the low dopant dose amounts to less than 50% of the medium dopant dose.