Semiconductor device including antiferromagnetic layer and data storage systems including the same

A semiconductor device comprising:

• a source structure;
• a stack structure comprising interlayer insulating layers and gate electrodes stacked in a first direction perpendicular to an upper surface of the source structure, the stack structure comprising a channel hole penetrating the interlayer insulating layers and the gate electrodes in the first direction;
• a filling insulating layer in a center of the channel hole;
• a channel layer on an external side surface of the filling insulating layer;
• a tunneling layer on an external side surface of the channel layer;
• a charge trapping layer on the tunneling layer;
• an antiferroelectric layer on the charge trapping layer, the antiferroelectric layer configured to have spontaneous polarization when a voltage is applied;
• and
• a crystal seed layer on one side surface of the antiferroelectric layer,
• wherein the antiferroelectric layer has a tetragonal crystal structure.

A data storage system comprising:

• a semiconductor device comprising an input/output pad;
• and
• a controller connected to the semiconductor device through the input/output pad,
• wherein the controller is configured to control the semiconductor device,
• wherein the semiconductor device comprises:
• a source structure;
• a stack structure comprising interlayer insulating layers and gate electrodes stacked in a first direction perpendicular to an upper surface of the source structure, the stack structure comprising a channel hole penetrating the interlayer insulating layers and the gate electrodes in the first direction;
• a filling insulating layer in a center of the channel hole;
• a channel layer on an external side surface of the filling insulating layer;
• a tunneling layer on an external side surface of the channel layer;
• a charge trapping layer on the tunneling layer;
• an antiferroelectric layer on the charge trapping layer, the antiferroelectric layer configured to have spontaneous polarization when a voltage is applied;
• and
• a crystal seed layer on one side surface of the antiferroelectric layer, and
• wherein the antiferroelectric layer has a tetragonal crystal structure.