Gate to source/drain contact links implemented in metallization layer contacting device layer

An apparatus, comprising:

• a transistor structure comprising a source body, a drain body, and a gate electrode over a channel structure;
• a source contact metal on the source body and a drain contact metal on the drain body, wherein an upper surface of the source contact metal, an upper surface of the drain contact metal, and an upper surface of the gate electrode are substantially coplanar above the channel structure;
• and
• first and second metal bodies in a dielectric layer over the transistor structure, the first metal body in contact with the gate electrode and one of the source contact metal or the drain contact metal, the first metal body continuous between the gate electrode and one of the source contact metal or the drain contact metal, the second metal body in contact with the other of the source contact metal and the drain contact metal.

A method, comprising:

• covering a transistor structure with a first dielectric layer, the first dielectric layer on a gate electrode and a source or drain contact, the transistor structure comprising the gate electrode, the source or drain contact, and a source or drain body under the source or drain contact, the source or drain contact on the source or drain body;
• patterning an opening in the first dielectric layer over the gate electrode and the source or drain contact;
• depositing a metal in the opening, wherein the metal on the gate electrode and the source or drain contact, and a lower edge of the metal is above the gate electrode and the source or drain contact;
• and
• covering the first dielectric layer and the metal with a second dielectric layer.