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US 2026/0096138 A1Published application
Semiconductor device, electronic apparatus including semiconductor device, and method of manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsChanghyun KIM, Eunji YANG, Eunkyu LEE
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Abstract
A semiconductor device includes a channel including a two-dimensional semiconductor material, a source electrode and a drain electrode electrically connected to both ends of the channel, respectively, a two-dimensional material oxide layer on the channel, a dipole oxide layer on the two-dimensional material oxide layer, a dielectric layer on the dipole oxide layer, and a gate electrode on the dielectric layer.
Claims20
A semiconductor device comprising:
- a channel including a two-dimensional semiconductor material;
- a source electrode and a drain electrode electrically connected to both ends of the channel, respectively;
- a two-dimensional material oxide layer on the channel;
- a dipole oxide layer on the two-dimensional material oxide layer;
- a dielectric layer on the dipole oxide layer;
- and
- a gate electrode on the dielectric layer,
- wherein the dipole oxide layer includes at least one of La2O3, Al2O3, ScO, Y2O3, or MgO, and
- the dielectric layer includes at least one of HfO2, ZrO2, or HfZrO.
6 more elements
An electronic apparatus comprising:
- a substrate;
- and
- a plurality of semiconductor devices on the substrate,
- wherein each of the plurality of semiconductor devices comprises,
- a channel including a two-dimensional semiconductor material;
- a source electrode and a drain electrode electrically connected to both ends of the channel, respectively;
- a two-dimensional material oxide layer on the channel;
- a dipole oxide layer on the two-dimensional material oxide layer;
- a dielectric layer on the dipole oxide layer;
- and
- a gate electrode on the dielectric layer,
- wherein the dipole oxide layer includes at least one of La2O3, Al2O3, ScO, Y2O3, or MgO, and
- the dielectric layer includes at least one of HfO2, ZrO2, or HfZrO.
10 more elements
A method of manufacturing a semiconductor device, the method comprising:
- alternately forming a dummy layer and a channel on a substrate to form a stack structure, the channel including a two-dimensional semiconductor material;
- forming a source electrode and a drain electrode on both sides of the stack structure, respectively;
- removing the dummy layer;
- forming a two-dimensional material oxide layer on the channel;
- forming a dipole oxide layer on the two-dimensional material oxide layer;
- forming a dielectric layer on the dipole oxide layer;
- and
- forming a gate electrode on the dielectric layer,
- wherein the dipole oxide layer includes at least one of La2O3, Al2O3, ScO, Y2O3, or MgO, and
- the dielectric layer includes at least one of HfO2, ZrO2, or HfZrO.
7 more elements
Dependencies are inferred from the claim text.