Semiconductor device and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device comprising:

• a step of preparing a wafer formed by a wide bandgap semiconductor and having a principal surface on which a semiconductor region of a first conductivity type is formed, and selectively forming a plurality of body regions at intervals in a first direction in a surface layer portion of the semiconductor region by selectively implanting a second conductivity type impurity into the semiconductor region;
• a step of forming a first mask that selectively covers each of the body regions, wherein the first mask includes a first portion extending in a second direction orthogonal to the first direction and having a first width in the first direction, and the pair of the projection portions protruding from a center of the first portion in the second direction toward both sides in the first direction;
• a step of forming a first impurity region in a surface layer portion of the body region by implanting a first conductivity type impurity into the body region through the first mask, and leaving a contact pattern region constituted of a part of the body region in a region covered with the first mask;
• a step of forming a second mask that has an opening for selectively exposing the contact pattern region and covers the first impurity region;
• a step of forming a body contact region in the surface layer portion of the body region by implanting a second conductivity type impurity into the contact pattern region through the second mask;
• and
• a step of forming a gate electrode covering a channel formed in a region between the semiconductor region and the first impurity region in the surface layer portion of the body region.