Semiconductor device and method for manufacturing same

A semiconductor device, comprising:

• a substrate;
• a gallium nitride layer located on a non-polar surface of the substrate, the gallium nitride layer including a plurality of fin parts separated from each other in a first direction parallel to a c-axis direction, the plurality of fin parts extending in a second direction orthogonal to the first direction;
• an electron supply layer located at a Ga-surface of at least one of the fin parts;
• a source finger part extending in the first direction and contacting the electron supply layer;
• a drain finger part extending in the first direction and contacting the electron supply layer, the drain finger part being separated from the source finger part in the second direction;
• a gate electrode positioned between the source finger part and the drain finger part in the second direction, the gate electrode facing the electron supply layer in the first direction;
• and
• a first insulating film located between the gate electrode and the electron supply layer.