Semiconductor device

A semiconductor device, comprising:

• a channel layer comprising GaN;
• a barrier layer on the channel layer, wherein the barrier layer comprises AlGaN and comprises an implant region that includes deuterium;
• a gate electrode on the barrier layer and comprising a metal material;
• a gate semiconductor layer between the barrier layer and the gate electrode, wherein the gate semiconductor layer comprises GaN doped with p-type impurities;
• a protective layer on the barrier layer and covering the gate electrode;
• and
• a source electrode and a drain electrode on opposite lateral sides of the gate electrode, wherein the source electrode and the drain electrode are electrically connected to the channel layer,
• wherein the protective layer comprises:
• a first protective layer on the implant region and comprising deuterium, and
• a second protective layer on the first protective layer.

A semiconductor device, comprising:

• a channel layer;
• a barrier layer on the channel layer, wherein the barrier layer comprises a material having a different energy band gap from a material of the channel layer, and wherein the barrier layer comprises an implant region including deuterium;
• a gate electrode on the barrier layer;
• a gate semiconductor layer between the barrier layer and the gate electrode;
• a protective layer on the implant region and covering the gate electrode;
• and
• a source electrode and a drain electrode on opposite lateral sides of the gate electrode, wherein the source electrode and the drain electrode are electrically connected to the channel layer,
• wherein the implant region is between a portion of the barrier layer that overlaps the gate electrode along a vertical direction and the source electrode and is between the portion of the barrier layer that overlaps the gate electrode along the vertical direction and the drain electrode, and
• wherein the protective layer comprises:
• a first protective layer on the barrier layer and comprising silicon oxide including deuterium, and
• a second protective layer on the first protective layer and comprising silicon oxide, silicon nitride, or silicon nitride oxide, wherein the silicon oxide, silicon nitride, or silicon nitride oxide of the second protective layer is substantially free of deuterium.