Semiconductor device

A semiconductor device comprising:

• first lower electrode lines and second lower electrode lines on a substrate and disposed alternately in a first direction that is parallel to an upper surface of the substrate, the first lower electrode lines and the second lower electrode lines being disposed at a first pitch in the first direction;
• a first interlayer dielectric covering the first lower electrode lines and the second lower electrode lines;
• first upper electrode lines and second upper electrode lines on the first interlayer dielectric and disposed in an alternating fashion in the first direction, the first upper electrode lines and the second upper electrode lines being disposed at a second pitch larger than the first pitch in the first direction, and at least one of the first upper electrode lines overlapping in a vertical direction with a first lower electrode line of the first lower electrode lines;
• and
• at least one via line between the at least one of the first upper electrode lines and the first lower electrode line of the first lower electrode lines that in a vertical direction overlaps one another, the at least one via line extending through the first interlayer dielectric,
• wherein the first upper electrode lines and the first lower electrode lines are electrically connected to one another, and
• wherein the second upper electrode lines and the second lower electrode lines are electrically connected to one another.