1s1r-based self-selective memory and manufacturing method therefor
AssigneePeking University
InventorsZongwei WANG, Yimao CAI, Gaoqi YANG, Ru HUANG
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Abstract
The present disclosure relates to a 1S1R-based self-selective memory, a manufacturing method therefor, and an electronic device. An intermediate layer is arranged between a selector layer and a resistive switching layer. The thermal conductivity of the intermediate layer is lower than that of the resistive switching layer. The intermediate layer is arranged between the resistive switching layer and the selector layer.
Claims20
A 1S1R-based self-selective memory, comprising a first functional layer, an intermediate layer, and a second functional layer, which are sequentially stacked on a substrate, wherein the second functional layer is separated from the first functional layer by the intermediate layer, the first functional layer is connected to a first electrode, and the second functional layer is connected to a second electrode, one of the first functional layer and the second functional layer is a selector layer, the other of the first functional layer and the second functional layer is a resistive switching layer, and a thermal conductivity of the intermediate layer is lower than that of the resistive switching layer.
A manufacturing method for a 1S1R-based self-selective memory, comprising:
- providing a substrate, and forming a first electrode on the substrate;
- forming a first functional layer on the first electrode;
- forming an intermediate layer on the first functional layer;
- forming a second functional layer on the intermediate layer, wherein the second functional layer is separated from the first functional layer by the intermediate layer, one of the first functional layer and the second functional layer is a selector layer, and the other of the first functional layer and the second functional layer is a resistive switching layer, and a thermal conductivity of the intermediate layer is lower than that of the resistive switching layer;
- and
- forming a second electrode on the second functional layer.
Dependencies are inferred from the claim text.