Semiconductor structure and method of manufacturing the same

A semiconductor structure, comprising:

• a metallization structure comprising at least a dielectric layer and at least a conductive line layer;
• and
• a memory structure embedded in the metallization structure and laterally surrounded by the dielectric layer, the memory structure comprises:
• a bottom metal layer;
• a ferroelectric layer over the bottom metal layer, wherein the ferroelectric layer has a first region and a second region surrounded by the first region from a cross-sectional view perspective;
• a floating metal layer over the first region of the ferroelectric layer;
• and
• an insulating layer over the floating metal layer and the ferroelectric layer,
• wherein the metallization structure further comprises a first conductive via and a second conductive via over the insulating layer and projectively over the floating metal layer.

A method for manufacturing a semiconductor structure, the method comprising:

• receiving a substrate;
• forming a first dielectric layer over a side of the substrate;
• forming a buried metal layer at a surface of the first dielectric layer;
• forming a ferroelectric layer over the first dielectric layer and covering the buried metal layer;
• forming a floating metal layer over a first region of the ferroelectric layer, wherein a second region of the ferroelectric layer surrounded by the first region is free from being covered by the floating metal layer;
• forming a first insulating layer over the floating metal layer;
• and
• forming a first conductive via and a second conductive via over the floating metal layer.