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US 2026/0096100 A1Published application
Method for forming a semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsWang Xiang, CHIA CHING HSU, Shen-De Wang, Yong-Lin Tseng, WEICHANG LIU
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Abstract
A method for forming a semiconductor device is disclosed. A substrate having a flash memory region and a logic device region is provided. At least one logic transistor is formed in the logic device region. At least one flash memory transistor is formed in the flash memory region. The at least one flash memory transistor comprises a metal select gate having two opposite sidewalls and two memory gates disposed on the two opposite sidewalls of the metal select gate.
Claims19
A method for forming a semiconductor device, comprising:
- providing a substrate having a flash memory region and a logic device region;
- forming at least one logic transistor in the logic device region;
- and
- forming at least one flash memory transistor in the flash memory region,
- wherein the flash memory transistor comprises a metal select gate having two opposite sidewalls and two memory gates respectively disposed on the two opposite sidewalls of the metal select gate;
- and two charge storage structures respectively disposed between the two memory gates and the substrate, wherein each of the two charge storage structures having an L-shaped profile,
- wherein the metal select gate comprises a high-k gate dielectric layer in direct contact with the two charge storage structures.
4 more elements
Dependencies are inferred from the claim text.