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US 2026/0096089 A1Published application
Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyooho JUNG, Donghyun KIM, Jooho LEE, Duk Hyun CHOE
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Abstract
Provided is a semiconductor device including a first electrode extending in a first direction on a substrate, a capping film covering a first surface of the first electrode intersecting with the first direction, a dielectric film surrounding a second surface of the first electrode intersecting with the first surface, and a second electrode covering the capping film and the dielectric film.
Claims20
A semiconductor device comprising:
- a first electrode extending in a first direction;
- a capping film covering a first surface of the first electrode, the first surface intersecting with the first direction;
- a dielectric film surrounding a second surface of the first electrode, the second surface intersecting with the first surface;
- and
- a second electrode covering the capping film and the dielectric film.
2 more elements
A method of fabricating a semiconductor device, the method comprising:
- forming a trench penetrating a mold structure in a first direction;
- forming a dielectric film on an inner sidewall of the trench;
- forming a first electrode on the dielectric film within the trench;
- forming a capping film covering the first electrode within the trench;
- removing at least a portion of the mold structure;
- and
- forming a second electrode on the dielectric film and the capping film.
4 more elements
A semiconductor device comprising:
- a first electrode extending in a first direction;
- a capping film covering a first surface of the first electrode, the first surface intersecting with the first direction;
- a dielectric film covering a second surface of the first electrode, the second surface intersecting with the first surface;
- a second electrode covering the capping film and the dielectric film;
- and
- a plurality of supporters spaced apart in the first direction and connected to the dielectric film,
- wherein the dielectric film separates the first electrode from the plurality of supporters,
- the second electrode fills a space between the plurality of supporters, and
- the plurality of supporters do not overlap with the dielectric film in the first direction.
6 more elements
Dependencies are inferred from the claim text.