System and methods for a nested capacitor

A device comprising:

• a first electrode forming a first capacitive structure, the first capacitive structure contacting a semiconductor material on a first side, the first capacitive structure having an axial opening;
• a second electrode forming a second capacitive structure, the second capacitive structure having a central prong coupled to an exterior section, the central prong within the axial opening of the first capacitive structure;
• and
• a first dielectric material arranged between the first capacitive structure and the second capacitive structure, the first dielectric material located on a second side of the first capacitive structure, the second side opposite the first side,
• wherein the first capacitive structure and the second capacitive structure are coaxial.

A method comprising:

• forming a mold within a first dielectric;
• depositing a first conductor within the mold, the first conductor conformally coating the mold;
• forming the first conductor into one or more first electrodes;
• forming an intermediate dielectric over the one or more first electrodes;
• and
• depositing a second conductor over the intermediate dielectric to form one or more second electrodes,
• wherein the one or more first electrodes are separated by the first dielectric, and wherein the one or more second electrodes form a continuous layer.